Feature：
l Infrared halogen lamp tube heating, cooling using air cooling;
l PlD temperature control for lamp power, which can accurately control temperature rise, ensuring good reproducibility and temperature uniformity;
l The inlet of the material is set on the WAFER surface to avoid cold point production during the annealing process and ensure good temperature uniformity of the product;
l Both atmospheric and vacuum treatment methods can be selected, with pre-treatment and purification of the body;
l Two sets of process gases are standard and can be expanded to up to 6 sets of process gases;
l The maximum size of a measurable single crystal silicon sample is 12inches(300x300MM);
l The three safety measures of safe temperature opening protection, temperature controller opening permission protection, and equipment emergency stop safety protection are fully implemented to ensure the safety of the instrument;
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ltems |
Indicators |
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Maximum product size |
6-inch wafer or maximum support for 150x150mm products |
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Temperature range |
room temperature~1250℃ |
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Maximum heating rate |
≤100°℃/s(this temperature is the heating rate without the carrier)≤25°C/s(SiC carrier) |
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Temperature uniformity |
±5℃≤500℃ 土1%>500℃ |
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Temperature repeatability |
±1℃ |
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Temperature control method |
Fast PID temperature control |
联系人：胡顺语
手机：0086-15813334038
电话：020-84789496
邮箱：md@minder-hightech.com
地址： 广州市番禺区大龙街市新路新水坑段43号813
