Feature:
l Infrared halogen lamp tube heating, cooling using air cooling;
l PlD temperature control for lamp power, which can accurately control temperature rise, ensuring good reproducibility and temperature uniformity;
l The inlet of the material is set on the WAFER surface to avoid cold point production during the annealing process and ensure good temperature uniformity of the product;
l Both atmospheric and vacuum treatment methods can be selected, with pre-treatment and purification of the body;
l Two sets of process gases are standard and can be expanded to up to 6 sets of process gases;
l The maximum size of a measurable single crystal silicon sample is 12inches(300x300MM);
l The three safety measures of safe temperature opening protection, temperature controller opening permission protection, and equipment emergency stop safety protection are fully implemented to ensure the safety of the instrument;
ltems |
Indicators |
Maximum product size |
6-inch wafer or maximum support for 150x150mm products |
Temperature range |
room temperature~1250℃ |
Maximum heating rate |
≤100°℃/s(this temperature is the heating rate without the carrier)≤25°C/s(SiC carrier) |
Temperature uniformity |
±5℃≤500℃ 土1%>500℃ |
Temperature repeatability |
±1℃ |
Temperature control method |
Fast PID temperature control |
Contact: Minder Hu
Phone: 0086-15813334038
Tel: 020-84789496
Email: md@minder-hightech.com
Add: 813,No.43,Xinshuikeng Section, Shixin Road, Dalong street,Panyu District,Guangzhou. Zip:511442