PVD CVD ALD RIE ICP EBEAM

CVD equipment for graphene and carbon nanotube materials

made to order
Product description: CVD
INQUIRY

Product introduction

The equipment is mainly used for the process coating of graphene and nano materials; Diffusion, oxidation and annealing of polycrystalline silicon and silicon carbide.

Main parameter

structural style	Horizontal, single-tube or multi-tube system automatic control
Adapt to wafer size	2-8″
Wafer delivery and retrieval method	Automatic cantilever quartz push-pull boat, combined with manual chip taking and releasing.
maximum temperature	1050℃
working temperature	400 ℃~850 ℃ continuously adjustable
Single-point temperature stability	400℃~850℃≤±0.5℃/24h
System limit vacuum	Better than 1Pa
pumping speed	Pumping time to limit vacuum ＜ 15Min
Working pressure range	5Pa to 1 × 105Pa continuously adjustable
Power supply	3 phase 5-wire 380V±10%，50Hz
cooling water	2~4Kgf/cm²，8L/min;