schottky diode made to order

Structure characteristics of schottky diode

Schottky diodes are different from ordinary PN junction diodes. N-type semiconductor materials are used to form metal semi-conductor junction by combining nonmetals.

(1) Schottky diode has low forward voltage, low power consumption and high efficiency.

(2) The reverse recovery time is short (within 10ns), which is suitable for working at high frequency.

(3) Be able to withstand high surge current.

(4) The reverse withstand voltage VR of Schottky diode is low. The reverse withstand voltage of Schottky diode is generally below 200V, and the latest technology can achieve above 200V.

Structural characteristics of fast recovery and ultra-fast recovery diodes

The internal structure of fast recovery diode is different from that of ordinary diodes. It is the addition of base region I between P-type and N-type silicon materials to form P-I-N silicon wafers.

(1) The reverse recovery time TRR is low. The reverse recovery time of fast recovery diode is generally hundreds of nanoseconds, and the recovery time TRR of ultra-fast recovery diode can be as low as tens of nanoseconds.

(2) The transient forward voltage decreases, and the forward current is large, from a few amperes to several thousand amperes.

(3) Withstand high reverse working voltage, and the reverse peak voltage can reach hundreds to thousands of volts。

Product package comparison

ZM30S1 Schottky diode

Characteristic：

IF(AV) : 1A

VRRM : ≥30V

VF : ≤0.43V

( 2 ) Low pressure drop

( 3 ) Low switching loss

( 4 ) Leakage small package：

SMD-0.1-2L

SMD 0. 2

Electrical characteristics：

Model example：

ZM30S2

ZM60S20

ZM150S30

ZM200S40......

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