Basic characteristics of power MOSFET
Power field-effect transistor Also called power MOSFET ,In practical applications, it has better characteristics than transistor, and is widely used in various fields such as motor speed regulation, switching power supply, etc.
The advantages of power MOSFET are shown in the following aspects:
1、It has high switching speed.
2、It has a wide safe working area without hot spots, and has a positive resistance temperature coefficient, so it is suitable for parallel use.
3、It has high reliability.
4、It has strong overload capacity, and the short-term overload capacity is 4 times of the normal rated value.
5、It has a high starting voltage, namely threshold voltage, which can reach 2~6V (generally between 1.5V and 5V). When the ambient noise is high, the pipe with high threshold voltage can be selected to improve the anti-interference ability; On the other hand, when the noise is low, select a tube with a low threshold voltage to reduce the required input drive signal voltage, which brings great convenience to the circuit design.
6、The power MOSFET is a voltage control device,It has high input impedance, low driving power and low requirements for driving circuit.
Product package comparison table
English code |
Packaging form |
English code |
Packaging form |
A |
TO-39 |
J |
LCC-18 |
B |
TO-3 |
K |
HTO-267AA |
C |
TO-257AA |
L |
SMD-3 |
D |
TO-254AA |
M |
PB-3A |
E |
TO-258AA |
N |
T2 |
F |
TO-259AA |
P |
SMD-0.2 |
G |
SMD-0.5 |
Q |
SMD-0.1 |
H |
SMD-1 |
R |
LCC-3 |
I |
SMD-2 |
|
|
ZMM3002 N-channel power MOSFET
characteristic:
( 1 ) Standard package
( 2 ) Low on-resistance
( 3 ) Quick switch
( 4 ) High input impedance
( 5 ) Drive Small power package :
SMD-0.2
Electrical characteristics :Tj =25℃
ZMM3002
I D : 2A
RDS(ON) : 0.115Ω
BVDSS : 30V
|
|
MI N |
TYP |
MAX |
UNIT S |
Test conditions |
BVDSS |
Leakage source breakdown voltage |
30 |
— |
— |
V |
VGS=0V,ID=250μA |
RDS ( on ) |
Static leakage source conduction resistance |
— |
— |
0.115 |
Ω |
VGS=10V ,ID=2A |
— |
— |
0.2 |
Ω |
VGS=4.5V ,ID=2A |
||
VGS ( th ) |
threshold voltage |
1 |
— |
3 |
V |
VDS= VGS ,ID=250μA |
IDSS |
Zero gate voltage leakage current |
— |
— |
25 |
μA |
VDS=30V ,VGS=0V |
— |
— |
250 |
VDS=24V , VGS=0V , TJ=125℃ |
|||
IGSS |
Gate source forward leakage current |
— |
— |
100 |
nA |
VGS=20V |
IGSS |
Gate source reverse phase leakage current |
— |
— |
-100 |
VGS=-20V |
Model example
ZMM3003 N
ZMM18N20 N
ZMP4953 P
ZMP1035 P........
Contact us for more models....
联系人:胡顺语
手机:0086-15813334038
电话:020-84789496
邮箱:md@minder-hightech.com
地址: 广州市番禺区大龙街市新路新水坑段43号813