Laser Solutions

MDSL-LD120 Laser dicing system

MDSL-LD120
产品描述：Laser dicing system
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Wafer Stealth Laser Dicing system

Wafer Stealth Laser Dicing, as a solution for laser dicing wafers, effectively avoids the problems of grinding wheel slicing. Laser Stealth dicing is achieved by shaping a single pulse of pulsed laser through optical means, allowing it to pass through the surface of the material and focus inside the material. In the focal area, the energy density is high, forming a multi photon absorption nonlinear absorption effect, which modifies the material to form cracks. Each laser pulse acts equidistant, forming equidistant damage to form a modified layer inside the material. At the position of the modified layer, the molecular bonds of the material are broken, and the connections of the material become fragile and easy to separate. After dicing, the product is fully separated by stretching the carrier film, creating gaps between the chips. This processing method avoids damage caused by direct mechanical contact and rinsing with pure water. At present, laser Stealth dicing technology can be applied to sapphire/glass/silicon and various compound semiconductor wafers.

Application：

The fully automatic wafer laser stealth dicing equipment is mainly suitable for various semiconductor materials such as silicon, germanium, silicon carbide, zinc oxide, etc. Stealth dicing is a dicing method that focuses laser light inside the workpiece to form a modified layer, and divides the workpiece into chips by expanding the adhesive film and other methods. It is suitable for 4-inch, 6-inch, and 8-inch&12inch wafers.

Dicing Samples

Processing size	12 inches, 8 inches, 6 inches, 4 inches
Processing method	Cut/back cut
Processing material	Sa pphire、Si、GaN and other brittle materials
Wafer thickness	100-1000um
Maximum processing speed	1000/s
Positioning accuracy	1um
Repeat positioning accuracy	1um
Edge collapse	< 5um
Weight	2800kg

NO.	Project name	Indicators
1	Laser type	Infrared laser (wavelength 1342nm)
2	Laser power	≥5W
3	Beam spot elliptic ity	≤85%
4	Beam quality factor M2	≤ 1.3
5	X axis	Stroke: ≥ 500mm, accuracy: ± 1um
6	Y axis	Stroke: ≥ 600mm, accuracy: ± 1um
7	Z axis	Stroke: ≥ 10mm, accuracy: ± 1um
8	θ axis	Stroke: ≥360° , rotation axis resolution: ≤0.0002°
9	Stage size	12 inches and backward compatible
10	Cutting thickness	Cutting thickness range needs to cover: 50um-1mm
11	Loading and unloading method	Fully automatic and manual compatible loading and unloading
12	Scribing method	Cut and back cut, modify the wafer by focusing the laser into the inside of the substrate (invisible cutting)
13	Cutting axis speed	0-1000mm/s
14	Laser cutting line width	≤2um
15	Cutting edge collapse	≤5um
16	Cutting object	SI/SIC silicon carbide wafer (wafer cutting path is free of foreign matter and dirt)
17	Focus method	Autofocus
18	Focus accuracy	± 1um
19	Lighting system	LED light source, adjustable brightness
20	Processing end power measurement	With processing end power measurement function