Mask aligner

MCXJ-MLS8 Maskless lithography System

MCXJ-MLS8
产品描述：Maskless lithography
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Sample:

Equipment structure diagram

Exposure host structure diagram

structure	illustrate
Exposing the countertop	Exposure area: countertop, substrate placement area
Optical system	Laser emission molding area
Environmental control system	Control the internal temperature and positive pressure of the device
Platform system	Controls the movement of the exposure table to complete the operation of the exposure path
Control system	Control system of the entire equipment

Note: Because the upgrade of the machine may change the actual appearance, the specific subject to the actual product.

No.	Environment	Require
1	Light source environment	Yellow light
2	Temperature	22℃±2℃
3	Humidity	50%±10%
4	Cleanliness	1000
5	CDA	0.6±0.1Mpa，200LPM, dry, clean air
6	Power supply	220~240V、50/60Hz、2.5KW；The ground wire must be grounded，
7	Cooling water	Temp.：10℃~ 20℃ Pressure：0.3MPa ~ 0.5MPa Flow rate：20L/min Pressure difference：0.3MPa以上 Take over caliber：Rc3/8
8	Venue	level：±3mm/3000mm shake：VC-B Bearing：750kg/㎡
10	Internet	One network port
11	Machine size	130011002100mm
12	Device weight	1500kg

Equipment specifications

No.	Project	Spec.	Remark
1	Resolution	0.6um/or other requirement	AZ703、AZ1350
2	CDU	±10%@1um
3	Substrate thickness	0.2mm～4mm
4	Date grid accuracy	60nm
5	Overlay	±500nm	130mmx130mm
6	Stitching accuracy	±200nm	AZ703
7	MAX exposure size	190X190mm
8	Throughput	≥300mm2/min	≤50mj/cm2；
9	light source	LD 375nm
10	light power	6W
11	Energy uniformity	≥95%
12	light life	10000hr

Note: Due to the difference in exposure principle and wavelength, the process parameters of MCXJ-MLS8 may be different from those of traditional exposure machines. The resolution of the photoresist used in the analytical test needs to be better than 0.6um at a wavelength of 375nm.

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