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  • Power mosfet component
Power mosfet component

Power mosfet component

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  • Product description: mosfet component
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Basic characteristics of power MOSFET

Power field-effect transistor Also called power MOSFET ,In practical applications, it has better characteristics than transistor, and is widely used in various fields such as motor speed regulation, switching power supply, etc.

The advantages of power MOSFET are shown in the following aspects:

1、It has high switching speed.

2、It has a wide safe working area without hot spots, and has a positive resistance temperature coefficient, so it is suitable for parallel use.

3、It has high reliability.

4、It has strong overload capacity, and the short-term overload capacity is 4 times of the normal rated value.

5、It has a high starting voltage, namely threshold voltage, which can reach 2~6V (generally between 1.5V and 5V).  When the ambient noise is high, the pipe with high threshold voltage can be selected to improve the anti-interference ability; On the other hand, when the noise is low, select a tube with a low threshold voltage to reduce the required input drive signal voltage, which brings great convenience to the circuit design.

6、The power MOSFET is a voltage control device,It has high input impedance, low driving power and low requirements for driving circuit.


Product package comparison table

English code

Packaging form

English code

Packaging form

A

TO-39

J

LCC-18

B

TO-3

K

HTO-267AA

C

TO-257AA

L

SMD-3

D

TO-254AA

M

PB-3A

E

TO-258AA

N

T2

F

TO-259AA

P

SMD-0.2

G

SMD-0.5

Q

SMD-0.1

H

SMD-1

R

LCC-3

I

SMD-2



ZMM3002 N-channel power MOSFET

characteristic:

( 1 )         Standard package

       ( 2 )         Low on-resistance

       ( 3 )         Quick switch

       ( 4 )         High input impedance

( 5 ) Drive    Small power package :




SMD-0.2

Electrical characteristics :Tj =25℃


ZMM3002

I D : 2A

RDS(ON) : 0.115Ω

BVDSS : 30V




MI N

TYP

MAX

UNIT S

Test conditions

BVDSS

Leakage source breakdown voltage

30

V

VGS=0V,ID=250μA

RDS ( on )

Static leakage source conduction resistance

0.115

Ω

VGS=10V ,ID=2A

0.2

Ω

VGS=4.5V ,ID=2A

VGS ( th )

threshold voltage

1

3

V

VDS= VGS ,ID=250μA

IDSS

Zero gate voltage leakage current

25

μA

VDS=30V ,VGS=0V



250

VDS=24V ,

VGS=0V ,

TJ=125℃

IGSS

Gate source forward leakage current

100

nA

VGS=20V

IGSS

Gate source reverse phase leakage current

-100

VGS=-20V

Model example

ZMM3003 N

ZMM18N20 N

ZMP4953 P

ZMP1035 P........

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CONTACT US

Contact: Minder Hu

Phone: 0086-15813334038

Tel: 020-84789496

Email: md@minder-hightech.com

Add: 813,No.43,Xinshuikeng Section, Shixin Road, Dalong street,Panyu District,Guangzhou. Zip:511442